Semiconductor device including protrusion type isolation layer

ABSTRACT

A semiconductor device may include a semiconductor layer having a convex portion and a concave portion surrounding the convex portion. The semiconductor device may further include a protrusion type isolation layer filling the concave portion and extending upward so that an uppermost surface of the isolation layer is a at level higher that an uppermost surface of the convex portion.

BACKGROUND

1. Field

Embodiments relate to a semiconductor device, and more particularly, toa semiconductor device including a protrusion type isolation layer.

2. Description of the Related Art

Due to design preferences, minute structures may be required to beformed in semiconductor devices. However, forming such minute structuresmay raise problems, e.g., decrease in the manufacturing yield andincrease in the manufacturing costs of semiconductor devices. Forexample, when the size of an isolation layer in a cell region isreduced, it may not be easy to distinguish areas between nodes, theisolation layer may have an insufficient gap-fill, or contactreliability may decrease due to a reduction of contact regions ormisalignment of the contact regions.

SUMMARY

Embodiments are directed to a semiconductor device and a method offorming a semiconductor device including a protrusion type isolationlayer, which substantially overcome one or more of the problems due tothe limitations and disadvantages of the related art.

It is a feature of an embodiment to provide a semiconductor device whereminute structures may be formed without a resulting decrease in themanufacturing yield and increase in the manufacturing costs.

At least one of the above and other features and advantages may berealized by providing a semiconductor device having a semiconductorlayer including a convex portion and a concave portion surrounding theconvex portion, a protrusion type isolation layer that may fill theconcave portion and extend upward so that an uppermost surface of theisolation layer may be at a level higher than an uppermost surface ofthe convex portion, at least one trench that traverses the convexportion and may have a line shape, at least one gate structure in the atleast one trench, and a contact plug on and electrically connected to aportion of the convex portion, and that may be surrounded by theisolation layer.

The at least one gate structure of the semiconductor device may have agate insulating layer and a gate conductive layer that may be buried inthe semiconductor layer. Moreover, an uppermost surface of the at leastone gate structure may be at a level lower than the uppermost surface ofthe isolation layer. Furthermore, the uppermost surface of the at leastone gate structure may be at a level lower than the uppermost surface ofthe convex portion. Moreover, the at least one gate structure may have acapping layer on the gate conductive layer that fills the trench, and anuppermost surface of the at least one gate structure may be at about thesame level as the uppermost surface of the isolation layer.

An uppermost surface of the contact plug of the semiconductor device maybe at about the same or a lower level than the uppermost surface of theisolation layer. Furthermore, a bit line may be on and electricallyconnected to the contact plug, where the bit line may be disposed belowthe uppermost surface of the isolation layer.

The isolation layer of the semiconductor device may include a pluralityof openings in an array, where each opening may expose an active regionof the semiconductor layer. Moreover, the isolation layer may includesilicon nitride. Moreover, an insulating layer may be formed on aportion of the convex portion. Furthermore, the convex portions and theconcave portions may be arranged on the semiconductor layer by using afirst sacrificial layer pattern as an etching mask.

At least one of the above and other features and advantages may also berealized by providing a semiconductor device having a semiconductorlayer that may include a convex portion and a concave portionsurrounding the convex portion, and a protrusion type isolation layerthat may fill the concave portion and may extend upward so that anuppermost surface of the isolation layer may be at a level higher thatan uppermost surface of the convex portion.

At least one of the above and other features and advantages may berealized by providing a method of forming a semiconductor device thatmay include providing a semiconductor layer, forming a convex portionand a concave portion that may surround the convex portion in thesemiconductor layer, forming a protrusion type isolation layer to thatmay fill the concave portion so that an uppermost surface of theisolation layer may be at a level higher than an uppermost surface ofthe convex portion, forming at least one trench traversing the convexportion and that may have a line shape, forming a gate structure in theat least one trench, forming a contact plug by filling a conductivematerial in a contact hole, and forming a bit line electricallyconnected to the contact plug that may cross a gate line. Where thecontact plug may be on and electrically connected to a portion of theconvex portion and may be surrounded by the isolation layer.

The method of forming the convex portions and the concave portions mayinclude forming a first sacrificial layer above the semiconductor layer,patterning the first sacrificial layer to form a first sacrificial layerpattern to expose portions of the semiconductor layer, and removing theexposed portions of the semiconductor layer by using the firstsacrificial layer pattern as an etching mask. Where forming theisolation layer may include forming a plurality of openings in an array,each opening may expose an active region of the semiconductor layer.

The method of forming the gate structure may include forming a gateinsulating layer buried in the semiconductor layer, and forming a gateconductive layer buried in the semiconductor layer. Furthermore, themethod of forming the gate structure may further include forming acapping layer on the gate conductive layer that may fill the trench sothat an uppermost surface of the at least one gate structure may be atabout the same level as the uppermost surface of the isolation layer.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other features and advantages will become more apparent tothose of ordinary skill in the art by describing in detail exemplaryembodiments with reference to the attached drawings, in which:

FIG. 1 illustrates a perspective view of an isolation layer according toan embodiment;

FIG. 2A illustrates a top view of a semiconductor device including aprotrusion type isolation layer according to an embodiment;

FIG. 2B illustrates a cross-sectional view of the semiconductor deviceof FIG. 2A, taken along lines A-A′, B-B′, and C-C′;

FIGS. 3A through 14A illustrate top views of stages in a method ofmanufacturing a semiconductor device including a protrusion typeisolation layer according to an embodiment;

FIGS. 3B through 14B illustrate cross-sectional views respectively takenalong lines A-A′ and B-B′ of FIGS. 3A through 14A;

FIG. 15 illustrates a cross-sectional view of a semiconductor deviceincluding a protrusion type isolation layer having an external surfaceon which a bit line is formed according to another embodiment; and

FIG. 16 illustrates a top view of a semiconductor device having anisolation layer according to an embodiment.

DETAILED DESCRIPTION

Korean Patent Application No. 10-2009-0031427, filed on Apr. 10, 2009,in the Korean Intellectual Property Office, and entitled: “SemiconductorDevice Including Protrusion Type Isolation Layer,” is incorporated byreference herein in its entirety.

It will be understood that when an element, such as a layer, a region,or a substrate, is referred to as being “on,” “connected to” or “coupledto” another element, it may be directly on, connected or coupled to theother element or intervening elements may be present. In contrast, whenan element is referred to as being “directly on,” “directly connectedto” or “directly coupled to” another element or layer, there are nointervening elements or layers present. Like reference numerals refer tolike elements throughout. As used herein, the term “and/or” includes anyand all combinations of one or more of the associated listed items.

It will also be understood that, although the terms first, second,third, etc., may be used herein to describe various elements,components, regions, layers and/or sections, these elements, components,regions, layers and/or sections should not be limited by these terms.These terms are only used to distinguish one element, component, region,layer or section from another region, layer or section. Thus, a firstelement, component, region, layer or section discussed below could betermed a second element, component, region, layer or section withoutdeparting from the teachings of exemplary embodiments.

Spatially relative terms, such as “above,” “upper,” “beneath,” “below,”“lower,” and the like, may be used herein for ease of description todescribe one element or feature's relationship to another element(s) orfeature(s) as illustrated in the figures. It will be understood that thespatially relative terms are intended to encompass differentorientations of the device in use or operation in addition to theorientation depicted in the figures. For example, when the device in thefigures is turned over, elements described as “below” or “beneath” otherelements or features would then be oriented “above” the other elementsor features. Thus, the exemplary term “above” may encompass both anorientation of above and below. The device may be otherwise oriented(rotated 90 degrees or at other orientations) and the spatially relativedescriptors used herein interpreted accordingly.

The terminology used herein is for the purpose of describing particularembodiments only and is not intended to be limiting of exemplaryembodiments. As used herein, the singular forms “a,” “an” and “the” areintended to include the plural forms as well, unless the context clearlyindicates otherwise. It will be further understood that the terms“comprises” and/or “comprising” when used in this specification, specifythe presence of stated features, integers, steps, operations, elements,and/or components, but do not preclude the presence or addition of oneor more other features, integers, steps, operations, elements,components, and/or groups thereof.

Embodiments described herein, with reference to the drawings, relate toexemplary embodiments and intermediate structures. As such, variationsfrom the shapes of the illustrations as a result, for example, ofmanufacturing techniques and/or tolerances, are to be expected. Thus,exemplary embodiments should not be construed as limited to theparticular shapes of regions illustrated herein but may be to includedeviations in shapes that result, for example, from manufacturing. Forexample, an implanted region illustrated as a rectangle may, typically,have rounded or curved features and/or a gradient of implantconcentration at its edges rather than a binary change from implanted tonon-implanted region. Likewise, a buried region formed by implantationmay result in some implantation in the region between the buried regionand the surface through which the implantation takes place. Thus, theregions illustrated in the figures are schematic in nature and theirshapes may be not intended to illustrate the actual shape of a region ofa device and are not intended to limit the scope of exemplaryembodiments.

Unless otherwise defined, all terms (including technical and scientificterms) used herein have the same meaning as commonly understood by oneof ordinary skill in the art to which exemplary embodiments belong. Itwill be further understood that terms, such as those defined in commonlyused dictionaries, should be interpreted as having a meaning that isconsistent with their meaning in the context of the relevant art andwill not be interpreted in an idealized or overly formal sense unlessexpressly so defined herein.

FIG. 1 illustrates a perspective view of an isolation layer 110,according to an exemplary embodiment. Referring to FIG. 1, the isolationlayer 110 may be disposed on a portion of a semiconductor layer 100. Theisolation layer 110 may be a protrusion type formed on the semiconductorlayer 100 while extending from an uppermost surface of the semiconductorlayer 100. The isolation layer 110 may include a plurality of openings108 that are regularly arrayed to expose portions of the semiconductorlayer 100. Each of the portions of the semiconductor layer 100 exposedby the plurality of openings 108 in the insulation layer 110 may be anactive region 120. Referring to FIG. 1, although the plurality ofopenings 108 may be arrayed in parallel along first and seconddirections, the present embodiment may not limited thereto. Anotherexemplary array of the plurality of openings 108 is illustrated in FIG.16.

FIG. 2A illustrates a top view of a semiconductor device including aprotrusion type isolation layer 110 according to an exemplaryembodiment. FIG. 2B illustrates a cross-sectional view of thesemiconductor device of FIG. 2A, taken along lines A-A′, B-B′, and C-C′.

Referring to FIGS. 2A and 2B, a semiconductor layer 100 may include aconvex portion 106, and a concave portion 104 surrounding the convexportion 106. Also, the semiconductor layer 100 may include at least onetrench 140 traversing the convex portion 106 and having a line shape.

As illustrated in FIG. 2B, the isolation layer 110 may fill the concaveportion 104 in such a manner that an uppermost surface thereof is at alevel higher than an uppermost surface of the convex portion 106. Theisolation layer 110 may include silicon nitride, and may have amulti-layer formed by stacking a plurality of layers.

A gate structure 150 may be formed in the active region 120 of thesemiconductor layer 100, and may traverse the convex portion 106.Because the isolation layer 110 may have a shape protruding from thesemiconductor layer 100, as shown in FIG. 1, an uppermost surface of theisolation layer 110 may be at a level that is as high as, or higherthan, that of the gate structure 150. Moreover, the gate structure 150may be disposed in at least one of the trenches 140. Furthermore, thegate structure 150 may include a gate insulating layer 152 and a gateconductive layer 154. Also, the gate structure 150 may include a cappinglayer 156.

An uppermost surface of the gate structure 150, e.g., an uppermostsurface of the gate conductive layer 154, may be at a level lower thanthe uppermost surface of the isolation layer 110. Also, the uppermostsurface of the gate structure 150, e.g., an uppermost surface of thegate conductive layer 154, may be at a level lower than the uppermostsurface of the convex portion 106 of the semiconductor layer 100. Inaddition, the gate insulating layer 152 and the gate conductive layer154 of the gate structure 150 may be buried in the semiconductor layer100.

Referring to FIG. 2B, a contact plug 170 may be disposed on andelectrically connected to a portion of the convex portion 106, e.g., asource/drain region 171. Moreover, the contact plug 170 may besurrounded by the isolation layer 110. An uppermost surface of thecontact plug 170 may be at the same level as, or a lower level than, theuppermost surface of the isolation layer 110. Also, a first interlayerinsulating layer 130 may be disposed on portions of the convex portion106 on which the contact plug 170 is not disposed.

The semiconductor device may further include a bit line BL that iselectrically connected to the contact plug 170. The bit line BL may bedisposed below the uppermost surface of the isolation layer 110.However, the position of the bit line BL is not limited thereto. Forexample, the bit line BL may be disposed above the uppermost surface ofthe isolation layer 110. As shown in FIG. 2B, a line capping layer 172may be formed on the bit line BL.

FIGS. 3A through 14A illustrate top views of stages in an exemplarymethod of manufacturing a semiconductor device including a protrusiontype isolation layer according to an exemplary embodiment. FIGS. 3Bthrough 14B illustrate cross-sectional views respectively taken alonglines A-A′ and B-B′ of FIGS. 3A through 14A, respectively. Moreover,FIGS. 5A through 14B may include the isolation layer 110 illustrated inFIG. 1.

Referring to FIGS. 3A and 3B, a semiconductor layer 100 may be provided.

The semiconductor layer 100 may include a substrate includingsemiconductor materials, e.g., silicon, or silicon-germanium, anepitaxial layer, a silicon-on-insulator (SOI) layer, asemiconductor-on-insulator (SEOI) layer, or the like.

A first sacrificial layer 102 may be formed above the semiconductorlayer 100. The first sacrificial layer 102 may be formed using, e.g.,thermal oxidation, rapid thermal oxidation (RTO), chemical vapordeposition (CVD), plasma enhanced CVD (PECVD), high density plasma CVD(HDP-CVD), sputtering, or the like. The first sacrificial layer 102 mayinclude, e.g, oxide, nitride, or oxynitride. For example, the firstsacrificial layer 102 may include silicon oxide, silicon nitride, orsilicon oxynitride. The first sacrificial layer 102 may have an etchingselectivity different from that of an isolation layer 110 (illustratedin FIG. 5B) to be formed in a subsequent process. Also, a pad layer (notshown) and/or a polysilicon layer (not shown) may be further formedbetween the semiconductor layer 100 and the first sacrificial layer 102.The pad layer and/or the polysilicon layer may allow the firstsacrificial layer 102 to be easily formed and may protect thesemiconductor layer 100 from an external environment, e.g., an etchantor the like, during a subsequent process.

Referring to FIGS. 4A and 4B, the first sacrificial layer 102 may bepatterned to form the first sacrificial layer patterns 102 a that exposeportions of the semiconductor layer 100. After that, the exposedportions of the semiconductor layer 100 may be partially removed byusing the first sacrificial layer patterns 102 a as an etching mask, sothat a convex portion 106 and a concave portion 104 may be formed in thesemiconductor layer 100. The concave portion 104 may surround the convexportion 106. The concave portion 104 may be formed by, e.g., performingan anisotropic etching such as a reactive ion etching (RIE), a plasmaetching, or an incline etching.

The operation of patterning the first sacrificial layer 102 and theoperation of partially removing the semiconductor layer 100 may besimultaneously performed. For example, a mask layer (not shown) used topattern the first sacrificial layer 102 may also be used to remove thecorresponding portions of the semiconductor layer 100. In this case, themask layer may have a different etching selectivity with respect to thefirst sacrificial layer 102 and the semiconductor layer 100. In asubsequent process, the isolation layer 110 (illustrated in FIG. 5B) maybe formed in the concave portion 104, and an active region 120(illustrated in FIG. 6B) including a source/drain region and a channelregion may be formed in the convex portion 106.

Referring to FIGS. 5A and 5B, the isolation layer 110 may be formed inthe concave portion 104 to fill the concave portion 104. Also, theisolation layer 110 may extend to fill spaces between the firstsacrificial layer patterns 102 a. Accordingly, an uppermost surface ofthe isolation layer 110 may extend to a level higher than an uppermostsurface of the convex portion 106 of the semiconductor layer 100.

An example of formation of the isolation layer 110 will now be describedin detail. An insulating layer (not shown) may be formed to fill theconcave portions 104 and the spaces between the first sacrificial layerpatterns 102 a and may cover the first sacrificial layer patterns 102 a.After that, an etch-back or chemical mechanical polishing (CMP) may beperformed so that uppermost surfaces of the insulating layer and thefirst sacrificial layer patterns 102 a are at the same level, therebyforming the isolation layer 110.

In an implementation, a liner layer (not shown) for easily forming theisolation layer 110 and enhancing the quality of the isolation layer 110may be formed between the concave portion 104 and the isolation layer110. The liner layer may include, e.g., the same material as theisolation layer 110. The isolation layer 110 may include an insulatingmaterial, and as described above, may have an etching selectivitydifferent from that of the first sacrificial layer 102. For example, ifthe first sacrificial layer 102 includes silicon oxide, the isolationlayer 110 may include silicon nitride. Also, if the first sacrificiallayer 102 includes silicon nitride, the isolation layer 110 may includesilicon oxide.

Referring to FIGS. 6A and 6B, the first sacrificial layer pattern 102 amay be removed to form an opening 108 that exposes the semiconductorlayer 100. The opening 108 may be surrounded by the isolation layer 110.As described above, if the first sacrificial layer patterns 102 a havean etching selectivity different from that of the isolation layer 110,the isolation layer 110 may not be removed although the firstsacrificial layer patterns 102 a are removed by etching. Therefore, thefirst sacrificial layer patterns 102 a may be easily removed withoutperforming an additional photolithography process. Since the firstsacrificial layer patterns 102 a may be removed, the convex portion 106of the semiconductor layer 100 may be exposed, and the isolation layer110 may protrude from the semiconductor layer 100. Thus, discrete“islands” 106 of the semiconductor layer 100 may be completelysurrounded by a “sea” of the isolation layer 110. When necessary,desired types of impurities may be injected into the convex portion 106.The convex portion 106 may function as an active region. Hereinafter,the convex portion 106 may be referred to as the active region 120.

Referring to FIGS. 7A and 7B, a first interlayer insulating layer 130may be formed on an uppermost surface of the active region 120. Thefirst interlayer insulating layer 130 may include, e.g., oxide, nitride,or oxynitride. For example, the first interlayer insulating layer 130may include silicon oxide, silicon nitride, or silicon oxynitride. Also,the first interlayer insulating layer 130 may have an etchingselectivity different from that of the isolation layer 110.

Referring to FIGS. 8A and 8B, a filling layer 132 and a secondsacrificial layer 134 may be sequentially formed on and above,respectively, the first interlayer insulating layer 130. The fillinglayer 132 may fill a region between the isolation layer 110. The fillinglayer 132 may also include an insulating material or a conductivematerial. In an implementation, refilling layer 132 may be formed ofpolysilicon. An uppermost surface of the filling layer 132 may be at alower level than an uppermost surface of the isolation layer 110, andthus, the isolation layer 110 may protrude from the filling layer 132.Such protruded isolation layer 110 may function as planarizationstoppers in a subsequent process. The second sacrificial layer 134 maybe formed on the filling layer 132 and the isolation layer 110. In otherwords, the second sacrificial layer 134 may fill a region between theisolation layer 110 and may cover the isolation layer 110. The secondsacrificial layer 134 may include, e.g., oxide, nitride, or oxynitride.For example, the second sacrificial layer 134 may include silicon oxide,silicon nitride, or silicon oxynitride. Also, the second sacrificiallayer 134 may have an etching selectivity different from the firstinterlayer insulating layer 130 and/or the isolation layer 110.

Referring to FIGS. 9A and 9B, the second sacrificial layer 134 may bepatterned to form a second sacrificial layer pattern 134 a that exposesthe filling layer 132. The second sacrificial layer pattern 134 a mayextend across the active regions 120. After that, a spacer 136 may beformed at both sides of the second sacrificial layer pattern 134 a. Thespacer 136 may include oxide, nitride, or oxynitride. For example, thespacer 136 may include silicon oxide, silicon nitride, or siliconoxynitride. Also, the spacer 136 may have an etching selectivitydifferent from that of the second sacrificial layer pattern 134 a.

After that, a second interlayer insulating layer 138 may be formed atboth sides of the spacer 136. The second interlayer insulating layer 138may include, e.g., oxide, nitride, or oxynitride. For example, thesecond interlayer insulating layer 138 may include silicon oxide,silicon nitride, or silicon oxynitride. The second interlayer insulatinglayer 138 may have an etching selectivity different from that of thespacer 136. The second interlayer insulating layer 138 may include thesame material as the second sacrificial layer 134. After forming thesecond sacrificial layer pattern 134 a, the spacer 136, and the secondinterlayer insulating layer 138, their upper surfaces may be planarized.

Referring to FIGS. 10A and 10B, the spacer 136, the filling layer 132disposed below the spacer 136, and the first interlayer insulating layer130 may be removed. As described above, since each of the secondsacrificial layer patterns 134 a and the second interlayer insulatinglayer 138 may have an etching selectivity different from that of thespacer 136, the spacer 136 may be removed by using the secondsacrificial layer patterns 134 a and the second interlayer insulatinglayer 138 as an etching mask. Also, as described above, since each ofthe second sacrificial layer patterns 134 a and the second interlayerinsulating layer 138 may have an etching selectivity different fromthose of the filling layer 132 and the first interlayer insulating layer130, the filling layer 132 and the first interlayer insulating layer 130may be removed by using the second sacrificial layer pattern 134 a andthe second interlayer insulating layer 138 as the etching mask.

Thereafter, a portion of the semiconductor layer 100 disposed below thespacer 136 may be removed. As described above, since each of the secondsacrificial layer patterns 134 a and the second interlayer insulatinglayer 138 may have an etching selectivity different from that of thesemiconductor layer 100, the portion of the semiconductor layer 100 maybe removed by using the second sacrificial layer patterns 134 a and thesecond interlayer insulating layer 138 as the etching mask. As such, atrench 140 may be formed to expose the semiconductor layer 100.

As illustrated in FIG. 10A, the trench 140 may have the same shape asthe spacer 136, and may have a line shape extending across the activeregions 120, with having disposed therebetween the second sacrificiallayer patterns 134 a. A depth from an uppermost surface of thesemiconductor layer 100 to a bottom surface of the trench 140 may besmaller than that of the isolation layer 110. Thus, the isolation layer110 may extend higher than the trench 140 and adjacent trenches 140 maybe separated by the isolation layer 110. The trench 140 may expose thesemiconductor layer 100 at a lower portion thereof corresponding to theactive region 120. Also, the trench 140 may expose the isolation layer110 at a lower portion thereof corresponding to the isolation layer 110,e.g., a portion in between the active region 120. The trench 140 mayexpose the semiconductor layer 100, the first interlayer insulatinglayer 130, and the filling layer 132 at a side portion thereofcorresponding to the active region 120. The trench 140 may expose theisolation layer 110 at a side portion thereof corresponding to theisolation layer 110.

As described above, since each of the second sacrificial layer patterns134 a and the second interlayer insulating layer 138 may have an etchingselectivity different from those of the spacer 136, the filling layer132, the first interlayer insulating layer 130, and the semiconductorlayer 100, the second sacrificial layer patterns 134 a and the secondinterlayer insulating layer 138 may be used as etching masks. Moreover,the second sacrificial layer patterns 134 a and the second interlayerinsulating layer 138 may include silicon nitride, the spacer 136 and thefirst interlayer insulating layer 130 may include silicon oxide, and thefilling layer 132 may include polysilicon.

Referring to FIGS. 11A and 11B, a gate structure 150 may be formed inthe trench 140. For example, a gate insulating layer 152 may be formedon a bottom surface and portions of side walls of the trench 140. Then,a gate conductive layer 154 may be formed on the gate insulating layer152. After that, a capping layer 156 may be formed on the gateinsulating layer 152 and the gate conductive layer 154 to completelyfill the trench 140. The gate insulating layer 152, the gate conductivelayer 154, and the capping layer 156 may constitute the gate structure150. Next, the second interlayer insulating layer 138 may be planarizedto expose the isolation layer 110. As described above, since theisolation layer 110 may function as a planarization stopper andprotrudes out, compared to the filling layer 132, the isolation layer110 may prevent the filling layer 132 from being exposed.

The gate insulating layer 152 and the gate conductive layer 154 maypartially fill the trench 140, and may be buried so that an uppermostsurface thereof may be at a level lower than the uppermost surface ofthe semiconductor layer 100. Also, as illustrated in FIG. 11A, the gatestructure 150 may form a gate line GL having a line shape traversing theactive regions 120. Also, the gate conductive layer 154 may function asa gate electrode and/or a wordline. The gate insulating layer 152 mayinclude oxide, nitride, or oxynitride. For example, the gate insulatinglayer 152 may include silicon oxide, silicon nitride, or siliconoxynitride. Also, the gate insulating layer 152 may be a multi-layerhaving a double-layer structure including a silicon oxide layer and asilicon nitride layer. The gate conductive layer 154 may be formed by,e.g., CVD, PECVD, HDP-CVD, sputtering, metal organic CVD (MOCVD), ALD,or the like. The gate conductive layer 154 may include, e.g.,polysilicon, TiN, Ti/TiN, WN, W/WN, TaN, Ta/TaN, TiSiN, TaSiN, WSiN, W,Al, Cu, Mo, Ti, Ta, Ru, or combinations thereof The capping layer 156may include, e.g., oxide, nitride, or oxynitride. For example, thecapping layer 156 may include silicon oxide, silicon nitride, or siliconoxynitride.

Referring to FIGS. 12A and 12B, the second sacrificial layer pattern 134a, the filling layer 132, and the first interlayer insulating layer 130disposed between the gate structures 150 may be removed to form acontact hole 160. The contact hole 160 may expose the semiconductorlayer 100, i.e., the active region 120 between the gate lines GL. Sincethe isolation layer 110 is exposed, the contact hole 160 may be easilyformed at a desired position. Also, if each, or at least one of, theisolation layer 110, the capping layer 156 and the second interlayerinsulating layer 138 has an etching selectivity different from those ofthe second sacrificial layer pattern 134 a, then the filling layer 132and/or the first interlayer insulating layer 130, the isolation layer110, the capping layer 156 and/or the second interlayer insulating layer138 may be used as an etching mask. This is known as a self alignedcontact (SAC) forming method.

Referring to FIGS. 13A and 13B, the contact hole 160 may be filled witha conductive material, thereby forming a contact plug 170. The contactplug 170 may be electrically connected to the active region 120 of thesemiconductor layer 100. For example, the contact plug 170 may beelectrically connected to a drain region of the gate structure 150.Also, the contact plug 170 may include a bit line contact plugelectrically connected to a bit line BL (refer to FIG. 14A) that may beformed in a subsequent process. The contact plug 170 may include, e.g.,polysilicon, TiN, Ti/TiN, WN, W/WN, TaN, Ta/TaN, TiSiN, TaSiN, WSiN, W,Al, Cu, Mo, Ti, Ta, Ru, or combinations thereof Also, the contact plug170 may be a multi-layer formed by stacking a plurality of layers.

Referring to FIGS. 14A and 14B, the bit line BL may be formed to beelectrically connected to the contact plug 170 and to cross the gateline GL. A bit line capping layer 172 including an insulating materialmay be formed on the bit line BL. Since the isolation layer 110 isexposed, the bit line BL may be easily formed at a desired position. Thebit line BL may include, e.g., polysilicon, TiN, Ti/TiN, WN, W/WN, TaN,Ta/TaN, TiSiN, TaSiN, WSiN, W, Al, Cu, Mo, Ti, Ta, Ru, or combinationsthereof. In FIGS. 14A and 14B, the bit line BL may be of a buried typethat does not protrude from the uppermost surface of the isolation layer110.

A buried type bit line BL may be formed using, e.g., a damascene method.

In an exemplary damascene method, an upper portion of a structure shownin FIGS. 13A and 13B, e.g., the contact plug 170 and/or the isolationlayer 110, may be partially removed to form a trench (not shown). Thistrench may be filled with a conductive material. An upper portion of thestructure having a partially removed section may include the isolationlayer 110, the second interlayer insulating layer 138, the capping layer156, the contact plug 170, and the filling layer 132. Thus, the bit lineBL may be electrically connected to the active region 120 of thesemiconductor layer 100, while it may also be electrically insulatedfrom other portions of the semiconductor layer 100 by the isolationlayer 110 and/or the first interlayer insulating layer 130. Embodimentsare not limited to the buried type bit line BL.

Although not illustrated in the drawings, a storage capacitor (notshown) may be formed to be electrically connected to portions, e.g.,source regions, of the active regions 120 of the semiconductor layer 100so that a dynamic random access memory (DRAM) device may be formed.Also, although the isolation layer 110 is described with respect to acell region, the isolation layer 110 may also be formed in a peripheralregion.

FIG. 15 illustrates a cross-sectional view of a semiconductor deviceincluding a protrusion type isolation layer having an external surfaceon which a bit line BL_1 is formed according to an exemplary embodiment.Referring to FIG. 15, the bit line BL_1 may be of an external type,which may be disposed at the upper portion of the structure asillustrated in FIGS. 13A and 13B, and may be electrically connected tothe contact plug 170. When the bit line BL_1 is formed, the structureillustrated in FIGS. 13A and 13B, e.g., the contact plug 170 and/or anisolation layer 110, may not be removed. The bit line BL_1 may be formedusing a general etching method. For example, a bit line conductive layer(not shown) may be formed on the structure illustrated in FIGS. 13A and13B, e.g., on the contact plug 170 and/or the isolation layer 110, andthen the bit line conductive layer may be etched.

The bit line BL_1 may be formed using the damascene method. For example,an insulating layer (not shown) may be formed on the structureillustrated in FIGS. 13A and 13B and may be patterned to form a trench.The trench may be filled with a bit line conductive material and may beplanarized. The aforementioned external type bit line BL_1 may be formedtogether with the bit line that is formed in a peripheral region.

FIG. 16 illustrates a top view of a semiconductor device having anisolation layer 210 according to an exemplary embodiment. Detaileddescriptions of the features of FIG. 16 that are the same as theaforementioned contents may not be repeated below.

Referring to FIG. 16, a semiconductor device may include a plurality ofactive regions 220 that are arrayed in parallel along a first direction.The plurality of active regions 220 may be surrounded by the isolationlayer 210 that is a protrusion type isolation layer. As described above,the isolation layer 210 may be protruded out, compared to the pluralityof active regions 220 on the semiconductor layer 200. Also, thesemiconductor device may include gate lines GL and bit lines BLelectrically connected to the plurality of active regions 220.

A method of manufacturing the semiconductor device that has a protrusiontype isolation layer 110, according to an exemplary embodiment, mayfirst include providing a semiconductor layer 100. Thereafter, a firstsacrificial layer 102 may be formed above the semiconductor layer, andthe first sacrificial layer 102 may be patterned to form a firstsacrificial layer pattern 102 a to expose portions of the semiconductorlayer. The exposed portions of the semiconductor layer 100 may beremoved by using the first sacrificial layer pattern 102 a as an etchingmask, thereby the concave portion 104 and the convex portion 106 may beformed in the semiconductor layer 100. Then, the isolation layer 110 maybe formed to fill the concave portion 104, and the isolation layer 110may also be formed to extend to fill a space between the firstsacrificial layer patterns to have a level higher than an uppermostsurface of the convex portion 106. Then, the first sacrificial layerpattern 102 a may be removed to form a plurality of openings 108partially exposing the semiconductor layer 100.

The method of manufacturing the semiconductor device may also includesequentially forming the first interlayer insulating layer 130, thefilling layer 132, and the second sacrificial layer 134 on and above theconvex portion 106. The second sacrificial layer 134 may be patterned toexpose a portion of the filling layer 132, the second sacrificial layer134 a, and the second interlayer insulating layer 138. Then, a spacer136 may be formed on side surfaces of the second sacrificial layerpattern 134 a. Next, the spacer 136 may be removed, and trenches 140 maybe formed by removing at least the filling layer 132 and the firstinterlayer insulating layer 130 by using the second interlayerinsulating layer 138 as an etching mask. Next, the gate structure 150may be formed in at least one or each of the trenches 140.

The contact hole 160 disposed between the gate structures 150 may beformed by removing the second sacrificial layer pattern 134 a, a portionof the filling layer 132, and a portion of the interlayer insulatinglayer 132. Then, the contact plug 170 may be formed by filling aconductive material in the contact hole 160. Thereafter, a bit line BLmay be formed that is electrically connected to the contact plug 170 andcrossing the gate line GL.

Exemplary embodiments have been disclosed herein, and although specificterms are employed, they are used and are to be interpreted in a genericand descriptive sense only and not for purpose of limitation.Accordingly, it will be understood by those of ordinary skill in the artthat various changes in form and details may be made without departingfrom the spirit and scope of the present invention as set forth in thefollowing claims.

1. A semiconductor device, comprising: a semiconductor layer including aconvex portion and a concave portion surrounding the convex portion; aprotrusion type isolation layer filling the concave portion andextending upward so that an uppermost surface of the isolation layer isat a level higher than an uppermost surface of the convex portion; atleast one trench in the convex portion; at least one gate structure inthe at least one trench; and a contact plug on and electricallyconnected to a source/drain region of the convex portion, the contactplug being surrounded by the isolation layer.
 2. The semiconductor asclaimed in claim 1, wherein the at least one gate structure has a gateinsulating layer and a gate conductive layer that are buried in thesemiconductor layer.
 3. The semiconductor as claimed in claim 2, whereinan uppermost surface of the at least one gate structure is at a levellower than the uppermost surface of the isolation layer.
 4. Thesemiconductor as claimed in claim 2, wherein an uppermost surface of theat least one gate structure is at a level lower than the uppermostsurface of the convex portion.
 5. The semiconductor as claimed in claim2, wherein the at least one gate structure includes a capping layer onthe gate conductive layer that fills the trench, the gate structurehaving an uppermost surface that is at about the same level as theuppermost surface of the isolation layer.
 6. The semiconductor asclaimed in claim 1, wherein an uppermost surface of the contact plug isat about the same or a lower level than the uppermost surface of theisolation layer.
 7. The semiconductor as claimed in claim 1, wherein theisolation layer includes a plurality of openings in an array, eachopening exposing an active region of the semiconductor layer.
 8. Thesemiconductor as claimed in claim 1, wherein the isolation layerincludes silicon nitride.
 9. The semiconductor as claimed in claim 1,further comprising an insulating layer on a portion of the convexportion.
 10. The semiconductor as claimed in claim 1, further comprisinga bit line electrically connected to the contact plug, the bit linebeing disposed below the uppermost surface of the isolation layer. 11.The semiconductor as claimed in claim 1, further comprising a bit lineelectrically connected to the contact plug, the bit line being disposedabove the uppermost surface of the isolation layer.
 12. Thesemiconductor as claimed in claim 1, wherein a plurality of convexportions are arranged on the semiconductor layer in an array.
 13. Asemiconductor device, comprising: a semiconductor layer including aconvex portion and a concave portion surrounding the convex portion; anda protrusion type isolation layer filling the concave portion andextending upward so that an uppermost surface of the isolation layer isa at level higher that an uppermost surface of the convex portion. 14.The semiconductor as claimed in claim 13, wherein the isolation layerincludes a plurality of openings in an array, each opening exposing anactive region of the semiconductor layer.
 15. The semiconductor asclaimed in claim 13, wherein the convex portions and the concaveportions are arranged on the semiconductor layer by using a firstsacrificial layer pattern as an etching mask. 16-20. (canceled)
 21. Thesemiconductor device as claimed in claim 1, wherein the at least onetrench traverses the convex portion.
 22. The semiconductor device asclaimed in claim 1, wherein the at least one trench has a line shape.